Abstract:

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This work presents an investigation into the impact of hole mobility variations on short channel effects (SCEs) in different FinFETs using semiconductor fin materials. Using the PADRE simulator, we simulated FinFETs made of Gallium Arsenide (GaAs), Gallium Antimonide (GaSb), Gallium Nitride (GaN), and Silicon (Si). The study involved analyzing performance metrics, including Drain Induced Barrier Lowering (DIBL), Subthreshold Swing (SS), and Threshold Voltage roll-off. The study showed that variations in hole mobility do not significantly impact short channel issues in FinFETs. However, there is a notable shift in short channel effects observed in GaAs-FinFETs with higher hole mobilities. Despite consistent short channel effects, GaAs-FinFETs demonstrated superior performance in terms of DIBL with lowest value of 8.28 mV/V at at hole mobilities of 1400 cm2/Vs and 1500 cm2/Vs, and threshold voltage with lowest value of 0.427 V at (100-1300) cm2/Vs. On the other hand, GaN-FinFET outperformed other FinFETs in terms of subthreshold swing by exhibiting lowest value of 63.95 mV/dec at hole mobilities of 1400 cm2/Vs and 1500 cm2/Vs. The study concludes that while variations in hole mobility do not significantly affect short channel issues in FinFETs, there is a distinct change observed in short channel effects in GaAs-FinFETs at higher hole mobilities. Understanding the relationship between hole mobility variations and short channel effects enables designers to optimize device structures and material choices for better overall performance

Keyward(s): DIBL, FinFETs, GaAs, GaSb, Hole Mobility, SCEs,

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